Contact : Mehmet Kaynak kaynak@ihp-microelectronics.com

IHP GmbH – Innovations for High-Performance Microelectronics is a public funded German research institute located in Frankfurt (Oder) in Germany. With 250 employees and around 26 Mio EUR annual turn-over for operation cost and invest IHP is dedicated to innovative solutions for wireless and broadband communication systems by close co-work of competent teams working in the fields of material research, process technology, circuit design, and systems.

Regarding the history of the development of SiGe HBTs, IHP helped to get the introduction of C into SiGe base accepted. Pioneer results were presented at the IEDM conferences 1997-99 including the first integration of SiGe:C HBT in 0.25µm CMOS technology. IHP’s activities in this field intent to combine best high-frequency performance and cost-effective HBT integration in CMOS technologies. In this direction, IHP demonstrated improved HBT concepts  at the IEDM conferences from 2001-08  achieving best-in-class values for the cut-off frequency and ring oscillator gate delays of 2.5ps (IEDM 2008). Currently, advanced modules of this explorations will be integrated into a 0.13µm BiCMOS technology. Monolithic integration of MEMS module to 0.25 µm BiCMOS process is one of the main goal of IHP to follow the “More than Moore” strategy. The MEMS module development related works of IHP is presented BCTM (2009) and first demonstration of full embedded RF-MEMS switch is also announced in IEDM (2009) conferences. Lastly, in IEDM (2010), IHP microelectronics announced two outstanding work on mm-wave applications; a SiGE BiCMOS technology with a ft/fmax of 300/500GHz and a fully BiCMOS embedded RF-MEMS switch for 90 – 140 GHz applications.

The IHP is or has been a partner in EU projects: DOTFIVE, PULSERS I and II, GALAXY, MIMAX, OMEGA, BOOM, HELIOS, FLEXWIN and others. It is acting as a coordinator in the GALAXY project.

Resources: IHP owns a 1000 square meter, class-1 clean room and pilot line with production-grade tool-set for 0.25 and 0.13 µm technologies and offers its CMOS and SiGe BiCMOS technologies for Multi Project Wafer service and low-volume prototyping to external customers, also via Europractice. IHP’s SiGe BiCMOS technologies are tailored for high-performance, moderate-cost applications featuring up to 200 GHz fmax/fT in 0.25 µm node and >250 GHz fmax/fT in 0.13 µm node.

Bernd Tillack received the PhD degree from the University Halle-Merseburg in 1980. In 1981 he joined the IHP Frankfurt (Oder), Germany, as a staff member of the process technology. He had been the project leader of different IHP Si/SiGe technology projects. His research interests include SiGe BiCMOS technology development following the “More than Moore” strategy for embedded system applications. Since 2004 he is in charge of the Si/SiGe process and device technology in the IHP. In 2008 he got a Professorship for Si based high frequency technologies at the Berlin Institute of Technology (TU Berlin).

Mehmet Kaynak received his B.S degree from Electronics and Communication Engineering Department of Istanbul Technical University (ITU) in 2004, and took the M.S degree from Microelectronic program of Sabanci University, Istanbul, Turkey. He joined the technology group of IHP Microelectronics, Frankfurt (Oder), Germany in 2008. He is currently working on development and integration of embedded MEMS technologies and leading the MEMS group in IHP.