Nanotec | Wp2

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WP2 - Design of Al203, GaNSiC,GaAs, Si, SiGe based RF-MEMS circuits

DEMONSTRATOR 1: (10-24 GHz space/aerospace): Design and characterization of the subsystems for the 10-24 GHz high power (robust) reconfigurable antenna module - the RF-MEMS GaN/SiC chips, antennas and the RF-module and for the X-Band Reflect Array antenna – The RF-MEMS based RA cell on Al2O3 (Ceramic) (Run 1 and Run 2)

DEMONSTRATOR 2: (94 GHz passive imaging): Design and characterization of the 94 GHz high-sensitivity (switched low-noise) antenna front-end consisting of the RF-MEMS GaAs/SiGe MMICs with on-chip antennas as an option (Run 1 to Run 4)

DEMONSTRATOR 3: (140 GHz active imaging radar): Design and characterization of the subsystems for the 140GHz MIMO-radar, namely the RF-MEMS SiGe BiCMOS chips, the antennas and the RF-module with one iteration (Run 1 and Run 2). Development of the MIMO-radar software algorithms

Nanotec is funded by the FP7-ICT-2010-7 Theme 3 under the Grant Agreement N°288531

About Nanotec

To improve the reliability of RF-MEMS switches by using NANO-structured materials and also to realize novel types of micro-/mm-wave functions at 10-140 GHz using specifically developed GaN/GaAs/SiGe RFIC/MMIC foundry process TEChnologies with enabling on-chip low-loss RF-MEMS switches.